Gasonics L3510 Single Wafer Ashing System

Model: L3510 Single Wafer Ashing System


Used
Details:The GaSonics L3510
is a versatile downstream
photoresist removal system
designed for clean, damage-free removal
of the most difficult resist structures
Utilizing the production-proven
L-Series platform
the L3510 has a wide process window
due to its patented microwave plasma source
Programmable heating and process controls
contribute to the system's unparalleled process flexibility


Features:
Enhanced reliability, serviceability, and performance
Proven platform (L-platform)
Platen and lamp heating for process flexibility
Reliable endpoint detection
Small footprint, low cost of ownership
System performance matching
Option SMIF Indexer, AGV and robotic cassette loading
Stand-alone or flish mount installation
Specifications:
Gas Flows: O2 = 1000 - 4000 sccm
N2/H2 = 100 - 1000 sccm; N2 = 100 - 500 sccm
Pressure: 0.5 - >5.0 torr
Platen temperature: 100 - 300°C
µwave Power: 0 - 1200 watts at 2.45 GHz/water cooled
Lamp utilization: 0 - 100% (1000 watts)
Throughput: 1.2µm softbaked
Typical Results:

Descum: 45-60wph
Photoresist: 45-60wph
Implanted & Damaged: 45-60wpm
Within a wafer: ±5% - 10%
Wafer to wafer (average): ±5% - 10%
Ash rate: up to 3.5µm/min
System matching: ±10%
Mobile Ion Concentration: 1^10/cm2 size of 1^11/cm2
CV Shift: ≤0.1 volt
Particle: