Gasonics L3510, Single Wafer Ashing System

Brand: Gasonics
Model: L3510
SINGLE WAFER ASHING SYSTEM

Specifications
- Enhanced reliability, serviceability, and performance
- Proven platform (L-platform)
- Platen and lamp heating for process flexibility
- Reliable endpoint detection
- Small footprint, low cost of ownership
- System performance matching
- Option SMIF Indexer, AGV and robotic cassette loading
- Stand-alone or flish mount installation
- Gas Flows: O2 = 1000 - 4000 sccm; N2/H2 = 100 - 1000 sccm; N2 = 100 - 500 sccm
- Pressure: 0.5 - >5.0 torr
- Platen temperature: 100 - 300°C
- µwave Power: 0 - 1200 watts at 2.45 GHz/water cooled
- Lamp utilization: 0 - 100% (1000 watts)
- Throughput: 1.2µm softbaked

Typical Results
- Descum: 45-60wph
- Photoresist: 45-60wph
- Implanted & Damaged: 45-60wpm
- Within a wafer: ±5% - 10%
- Wafer to wafer (average): ±5% - 10%
- Ash rate: up to 3.5µm/min
- System matching: ±10%
- Mobile Ion Concentration: 1^10/cm2 size of 1^11/cm2
- CV Shift: ≤0.1 volt
- Particle: