Allwin21 AW810M

• Type: Rapid Thermal Processing System
• Wafer Sizes: Small pieces, 2", 3", 4", 5", 6", 8" (currently configured for 8" squares)
• Ramp-Up Rate: Programmable 10°C–120°C/sec, Max 200°C/sec (not recommended)
• Ramp-Down Rate: 10°C–200°C/sec (non-programmable)
• Steady State Duration: 0–300 seconds per step
• Steady State Temperature: 150°C–1150°C, Max 1250°C (not recommended)
• Temperature Repeatability: ±0.5°C at 1150°C (100-wafer set)
• Temperature Uniformity: ±8°C across 8" wafer at 1150°C
• ERP Pyrometer Range: 450°C–1250°C, ±1°C accuracy (with calibration)
• Thermocouple Range: 100°C–800°C, ±0.5°C accuracy
• Process/Purge Gas Inputs: 2 MFCs, supports inert/non-toxic gases (N2, O2, Ar, He, NH3, N2O2)
• Power Requirement: 208V, 3Ph, 60Hz, 100A

• Integrated process control system
• Real-time graphics display and process data analysis
• Closed-loop temperature control
• Time-temperature recipe editor
• Password protection for system access
• Built-in diagnostics and calibration functions
• Watchdog safety shutdown function
• Troubleshooting and manual subassembly activation
• Recipe validation and storage system
• PowerSum technology for process yield enhancement