AMERICA North (USA-Canada-Mexico)
Allwin21 Corp. AccuThermo AW 410 RTP
Wafer Size: Small~4 inch
Type: Desktop, Atmospheric
Temperature: 100~800°C or 450~1250°C
Gas Lines: 1 ~ 6 lines
Chamber Design: AG Associates Heatpulse 410
Wafer handling: Manual loading of wafer into the oven, single wafer processing.
Wafer sizes: 2″, 3″, 4″ wafers.
Ramp up rate: Programmable, 10°C to 200°C per second.
Recommended steady state duration: 0-300 seconds per step.
Ramp down rate: Programmable, 10°C to 250°C per second. Ramp down rate is temperature-and-radiation-dependent and the maximum is 125°C per second.
Recommended steady state temperature range: 150°C – 1150°C
ERP temperature accuracy: ±1°C, when calibrated against an instrumented thermocouple wafer (ITC).
Thermocouple temperature accuracy: ±0.5°C
Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer. (Repetition specifications are based on a 100-wafer set.)
Temperature uniformity: ±5°C across a 4″ (100 mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.) For a titanium silicide process, no more than 4% increase in non-uniformity during the first anneal at 650°C to 700°C.
Process/Purge gas inputs: Any inert and/or non-toxic gas regulated to 30 PSIG and pre-filtered to 1 micron. Typically, Nitrogen (N2), oxygen (O2), argon (Ar), and/or helium (He) are used.