Steag Heatpulse 610 RTP

Steag (AG Associates) Heatpulse 610 RTP Rapid Thermal Processing System.
Manually loaded and capable of processing silicon and III-V substrates up to
150mm in diameter, Heatpulse 610 provides solutions to
your process development and monitoring needs.
Benchtop system for rapid thermal processing of semiconductor wafers up
to 6” dia. max. (Depends on wafer tray with system).
Performance Specifications Recommended Steady State Temperature Range: 400-1250° C.
Steady-State Temperature Stability: ± 2° C.
Temperature Monitoring Mechanisms: Extended Range Pyrometer (ERP),
used throughout the recommended temperature range, or a thermocouple,
used for process temperatures below 400° C.
Heating Rate: 1-200° C per second, user-controllable.
Cooling Rate: Temperature dependent; max 150° C per second.
Maximum Non-uniformity: ±5°C across a 6″ (150mm) wafer at 1150°C.
(This is a one sigma deviation 100 angstrom oxide.)
For a titanium silicidation process, no more than 4% increase in
non-uniformity during the first anneal at 650°C to 700 °C.
Post-anneal sheet resistivity measured on a 150mm wafer annealed at
1100° C for 10 seconds. R&D models optimized for slip control.
Implant: As 1E16 50 KeV with implant uniformity ≤0.3%